preli m in ary dat a sh eet m ay 20 04 ag r26 1 8 0 e f 18 0 w , 2. 53 5 g h z ?2 .6 55 g h z , n - ch an n e l e- mod e , la te ra l mo sf e t introdu ction t he ag r26 180 ef i s a hi gh- v o l t age, gol d- me t a li z ed, en hanc em ent mod e , l a te r a ll y d i f f us ed met a l o x i de s e mi co ndu cto r ( l dmo s ) r f powe r tr a n s i s t or s u i t - ab le f o r ul tr ahi gh- fr eq uenc y ( uhf ) app li ca tion s, in cl udi ng mul t i c h anne l m u l t ip oin t di st r i but ion se r v i c e ( mmd s) for b r o adc as ti ng a nd c o m m un ic ati ons . figur e 1 . agr2 6 1 8 0 e f fla nge d pa c k a g e featu res t y pi cal pe r f or man c e for m m ds sy s t em s. f = 260 0 m h z, i dq = 170 0 m a, v d s = 28 v , adj ac ent ch ann el bw = 3.84 mhz , 5 mhz o f fs et; al ter nat e c han nel bw = 3.8 4 m h z, 10 m h z of fs et. t y p i c a l p/ a r a t i o o f 9. 8 db at 0 . 01 % ( p r o ba b i l i t y ) ccdf*: ? o u t put powe r : 27 w . ? p o we r gai n: 1 2 .5 db. ? ef f i ci en cy : 2 0 % . ? ac pr : ?33 d b c. ? ac l r 1: ?35 db c. ? re tur n l o s s : ?12 db . t y pic a l puls ed p1db, 6 s p u ls e at 10% duty : 185 w . hig h - r e l i abi li ty , gol d- me t a li z a ti on p r o c e s s . hot c a r r i er i n je cti o n ( hci ) i ndu ce d bia s d r i f t of < 5 % ov er 20 ye ar s. inte r n al ly ma tc h ed. hig h ga in , ef fic i enc y , and li nea r i ty . inte gr ated e s d p r o t ec tio n . dev i c e can wi ths t and a 1 0 :1 vo lt a ge s t an din g wa ve r a tio ( v s w r ) a t 28 vd c , 260 0 m h z , 1 80 w o u tpu t pow er pul se d 4 s a t 10 % du ty . lar ge s i gn al imp eda nc e p a r a mete r s a v a i l abl e. * t he test signal ut ilized i s 4- channel w -cdm a t e s t model 1. t h i s t e s t s i gn al pr ovides an equiva l ent ref e rence ( o ccupied bandw i d t h and wavef o rm ep f ) f o r t he act ual perf o rma nce w i t h a n m mds w a vef o rm . t a b l e 1. t h e r m al ch a r ac t e ris t ic s t a ble 2 . abs o l u te m a x i mum ra tings * * s t ress e s i n exc e ss of t he absolut e m a xim u m rat i ngs ca n caus e perm anent dam age t o t he device. t h e s e are absolut e st r e ss rat - ings only . f unct i o nal operat ion of t he device i s not im pli ed at t hese or any ot her condit i ons in e xcess of t hose given in t he operat ional se ct ions of t he dat a sheet . expos ure t o absolut e m a ximum rat i ngs f o r ext ended per iods can advers e l y af f e c t devic e reliabili t y . t a b l e 3. e s d rat i n g * * alt hough el ec t ros t a t i c di s c harge (e sd) prot ect i on circ ui t r y has been designed i n t o t h is device, pr oper p recaut i o ns m u st be t a ken t o avoid ex posure t o e sd and elec t r ical overs t res s (eo s) during all handling, asse mbly , and t e st operat ions. ag ere em pl oy s a hum an-body m odel (hb m), a m a chine m odel ( mm ), and a c harged-dev i c e m odel (c dm) qualif icat ion requ i r ement in order t o det erm i ne es d-sus cept ibi lit y limit s and pr ot ect i on design ev aluat ion. es d volt ag e t h res holds are depe ndent on t he circ ui t p a ramet e rs used in eac h of t he models, as def ined by je dec's je sd22- a1 14b (h bm) , jes d 22-a 1 15a (m m), and je sd22- c101a (cdm ) s t anda rds. cau ti o n : m o s d evi ces are su scep t i b l e to d a mag e fro m el ec- tro s t a ti c ch arg e . reaso n a b l e p r ecau ti o n s i n h a n - d l i n g an d p ackag i n g mo s d evi ces sh o u l d b e ob s e r v e d . 375d?03, style 1 pa r a m e te r s ym v a l u e u ni t the r m a l r e si st a n c e , j u n c ti on to ca s e r ? jc 0. 3 5 c / w pa r a m e te r s y m v a l u e u ni t dr a i n- s our c e v o lt a g e v ds s 65 v d c ga t e -s o u rc e v o lt a g e v gs ?0. 5, +15 v dc t o t a l d i ssi p a t i o n at t c = 2 5 c p d 500 w de r a te ab ov e 2 5 c? 3 w / c o p e r a t in g ju nct i on t e m per atu r e t j 200 c s t or ag e t e m per a t ur e ra nge t st g ?6 5, +1 50 c ag r2 6180 ef m i n i mu m ( v ) c la ss hbm 500 1 b mm 50 a cdm 100 0 4 peak devices
180 w, 2.535 ghz?2.655 ghz, n-channel e-mode, lateral mosfet may 2004 AGR26180EF preliminary data sheet electrical characteristics recommended operating conditions apply unless otherwise specified: t c = 30 c. table 4. dc characteristics table 5. rf characteristics * 3gpp w-cdma, typical p/a ratio of 8.5 db at 0.01% ccdf, f1 = 2645.0 mhz, and f2 = 2655 mhz. v dd = 28 vdc, i dq = 2 x 850 ma, and p out = 27 w average. nominal operating voltage 28 vdc. parameter symbol min typ max unit off characteristics drain-source breakdown voltage (v gs = 0, i d = 300 a) v (br)dss 65 ? ? vdc gate-source leakage current (v gs = 5 v, v ds =0v) i gss ? ? 6 adc zero gate voltage drain leakage current (v ds = 28 v, v gs =0v) i dss ? ? 18 adc on characteristics forward transconductance (v ds = 10 v, i d = 1 a) g fs ? 12 ? s gate threshold voltage (v ds =10v, i d = 600 a) v gs(th) 2.8 3.4 4.0 vdc gate quiescent voltage (v ds = 28 v, i d = 2 x 850 ma) v gs(q) 3.0 3.7 4.6 vdc drain-source on-voltage (v gs =10v, i d = 1 a) v ds(on) ? 0.08 ? vdc parameter symbol min typ max unit dynamic characteristics reverse transfer capacitance (v ds =28v, v gs = 0, f = 1.0 mhz) (this part is internally matched on both the input and output.) c rss ? 4.0 ? pf functional tests (in agere systems supplied test fixture) common-source amplifier power gain* g ps ? 12.5 ? db drain efficiency* ? 20 ? % third-order intermodulation distortion* (im3 distortion measured over 3.84 mhz bw @ f1 ? 10 mhz and f2 + 10 mhz) im3 ? ?36 ? dbc adjacent channel power ratio* (acpr measured over bw of 3.84 mhz @ f1 ? 5 mhz and f2 + 5 mhz) acpr ? ?40 ? dbc input return loss* irl ? ?12 ? db power output, 1 db compression point, pulsed 4 s at 10% duty. (v dd = 28 v, f c = 2655.0 mhz, pulsed 6 s at 10% duty) p 1db ? 185 ? w output mismatch stress (v dd = 28 v, p out = 180 w (pulsed 4 s at 10% duty), i dq = 2 x 850 ma, f c = 2655.0 mhz vswr = 10:1; [all phase angles]) no degradation in output power. 400 200 (in supplied test fixture)
preliminary data sheet AGR26180EF may 2004 180 w, 2.535 ghz?2.655 ghz, n-channel e-mode, lateral mosfet test circuit illustrations for AGR26180EF a. schematic b. component layout figure 2. component layout parts list: microstrip line: z1, z29 1.330 in. x 0.066 in.; z2, z27 0.753 in. x 0.112 in.; z3 0.145 in. x 0.066 in.; z4 1.578 in. x 0.066 in.; z5, z6 0.160 in. x 0.066 in.; z7, z8 0.172 in. x 0.066 in.; z9, z10 0.134 in. x 0.171 in.; z11, z12 0.320 in. x 0.600 in.; z13, z14 0.856 in. x 0.043 in.; z15, z16 0.155 in. x 0.645 in.; z17, z18 0.217 in. x 0.750 in.; z19, z20 0.473 in. x 0.088 in.; z21, z22 0.026 in. x 0.293 in.; z23, z24 0.194 in. x 0.066 in.; z25 1.718 in. x 0.066 in.; z26 0.341 in. x 0.066 in.; z28 0.150 in. x 0.075 in. atc ? chip capacitor: c9, c10, c11, c12: 4.7 pf 100b47_j500; c3, c14, c15, c16: 5.6 pf 100b5r6j_500; c19, c20: 0.7 pf 100a0r7j_500. c27: 47 pf 100a470jw; c28: 8.2 pf 100b8r2bw. c4, c5: 12 pf 100b120jw; murata ? 50 v chip capacitor: c3, c4: 4.7 f, grm55er7h475ka01; c5, c6: 2.2 f, grm43er71h225ka01l; c7, c8: 0.12 f, lll31mr71h124md01. avx ? 35 v capacitor: c1, c2, c17, c18: 15 f tpsd156k035r0300. 1206 size chip resistors: r1, r2: 4.7 ? ; r3, r4: 560 k ? ; r5, r6 470 ? . fair-rite ? ferrite bead l1, l2: 2512067007y3. taconic ? orcer rf-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. dut r1 r3 r5 z13 z1 z2 c16 v gg v dd c5 l1 c13 z3 c9 z5 z4 c10 z6 z12 z11 r2 r6 v gg c14 z14 z22 c12 z20 z12 z21 c11 z19 z15 z24 z23 out c7 c3 c15 v dd c8 c4 c18 z18 z17 1a 1b 3 2a 2b pins: 1a. drain 1b. drain 2a. gate 2b. gate 3. source + c17 + in c1 + l2 r4 c2 + c6 z8 z10 z7 z9 c19 c20 gate gnd drain c1 c2 c17 c3 c18 c4 c5 c6 c7 c8 c9 c10 ot1 c11 c12 c14 c15 c16 r3 r5 r1 l1 r4 r6 r2 l2 t1 t2 t3 t4 t5 t6 c13 c19 c20 2a 3 1a 2b 1b
180 w, 2.535 ghz?2.655 ghz, n-channel e-mode, lateral mosfet may 2004 AGR26180EF preliminary data sheet typical performance characteristics z s = test circuit impedance as measured from gate to gate, balanced configuration. z l = test circuit impedance as measured from drain to drain, balanced configuration. figure 3. series equivalent balanced input and output impedances mhz (f) z s ? ( complex source impedance ) z l ? ( complex optimum load impedance ) 2500 (f1) 6.4 ? j8.0 3.0 ? j7.8 2550 (f2) 5.8 ? j7.6 2.9 ? j7.0 2600 (f3) 5.2 ? j7.7 2.7 ? j6.2 2650 (f4) 4.7 ? j8.3 2.6 ? j5.5 2700 (f5) 4.5 ? j8.4 2.5 ? j4.7 0.1 0.1 0.1 0.2 0.2 0.3 0.3 0.4 0.4 0.5 0.5 0.6 0.6 0.7 0.7 0.8 0.8 0.9 0.9 1.0 1.0 1.2 1.2 1.4 1.4 1.6 1.6 1.8 1.8 2.0 2.0 3.0 3.0 4.0 4.0 5.0 5.0 10 10 10 20 20 20 50 50 50 0.2 0.2 0.2 0.4 0.4 0.4 0.6 0.6 0.6 0.8 0 .8 0.8 1.0 1.0 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 -140 -150 -160 170 -170 180 90 -90 -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.2 0.21 0.22 0.23 0.23 0.24 0.24 0.25 0.25 0.26 0.26 0.27 0.27 0.28 0.29 0.3 0.31 0.32 0.33 0.34 0.35 0.36 0.37 0.38 0.39 0.4 0.41 0.42 0.43 0.44 0.45 0.46 0.47 0.48 0.48 0.49 0.49 0.0 0.0 a n g l e o f t r a n s m i s s i o n c o e f f i c i e n t i n d e g r e e s a n g l e o f r e f l e c t i o n c o e f f i c i e n t i n d e g r e e s e > w a v e l e n g t h s t o w a r d < e w a v e l e n g t h s t o w a r d l o a d < e i n d u c t c a p a c i t i v e r e a c t a n c e c o m p o n e n t ( - j x / z o ) , o r i n d u c t i v e s u s c e p t a n c e ( - j b / y o ) resistance component (r/zo), or conductance component (g/yo) f z s f5 f1 z l f5 f1 z 0 = 10 ? dut 1a 1b 3 2a 2b + + zs zl ? ? balanced input matching network balanced output matching network pins: 1a & 1b drain, 2a & 2b gate, 3 source
preliminary data sheet AGR26180EF may 2004 180 w, 2.535 ghz?2.655 ghz, n-channel e-mode, lateral mosfet typical performance characteristics (continued) test conditions: two-carrier w-cdma 3gpp, peak-to-average = 8.5 db @ 0.01% ccdf, f1 = 2590 mhz, f2 = 2600 mhz, v dd = 28 v, i dq = 1700 ma. figure 4. power gain, drain efficiency, acpr, and im3 vs. output power test conditions: two-carrier w-cdma 3gpp, peak-to-average = 8.5 db @ 0.01% ccdf, f1 = 2590 mhz, f2 = 2600 mhz, v dd = 28 v, i dq = 1700 ma, p out = 27 w. figure 5. power gain, drain efficiency, acpr, im3, and irl vs. frequency 0 5 10 15 20 25 30 35 11 01 0 0 p out (w, average) z (%), g ps (db) z -70 -60 -50 -40 -30 -20 -10 0 acpr (dbc), im3 (dbc) z (%) imd acpr g ps 0 5 10 15 20 25 30 2520 2550 2580 2610 2640 2670 mhz z (%), g ps (db) z -48 -40 -32 -24 -16 -8 0 acpr (dbc), im3 (dbc), irl (db) z acp imd gain (db) rl (db) (%)
180 w, 2.535 ghz?2.655 ghz, n-channel e-mode, lateral mosfet may 2004 AGR26180EF preliminary data sheet typical performance characteristics (continued) test conditions: 28 v ds , i dq = 1700 ma, 2600 mhz. figure 6. power gain and drain efficiency vs. output power (cw signal data) test conditions: two-tone measurement @ 10 mhz tone spacing, v dd = 28 v dc , f1 = 2590 mhz, f2 = 2600 mhz. figure 7. imd vs. p out g ps 9 10 11 12 13 14 15 1 10 100 1000 0 1 0 2 0 3 0 4 0 5 0 6 0 g ps p out (w) 0 5 0 5 0 5 0 5 (%) -90 -80 -70 -60 -50 -40 -30 -20 -10 0 1 10 100 1000 p out (w, pep) z im3, im5, and im7 (dbc) z 0 5 10 15 20 25 30 35 40 45 (%) (%) im3 im5 im7
preliminary data sheet AGR26180EF may 2004 180 w, 2.535 ghz?2.655 ghz, n-channel e-mode, lateral mosfet typical performance characteristics (continued) test conditions: two-tone measurement @ 10 mhz tone spacing, v dd = 28 v dc , f1 = 2590 mhz, f2 = 2600 mhz. figure 8. imd vs. output power and i dq figure 9. power gain vs. output power and i dq -70 -60 -50 -40 -30 -20 -10 0 1 10 100 100 0 p out (w, pep) z im3 (dbc) z 1500 ma 1300 ma 1900 ma 2100 ma 1700 ma 10.5 11 11.5 12 12.5 13 13.5 14 1 10 100 1000 p out (w) z gain (db) z 1900 ma 2100 ma 1700 ma 1500 ma 1300 ma
180 w, 2.535 ghz?2.655 ghz, n-channel e-mode, lateral mosfet may 2004 AGR26180EF preliminary data sheet typical performance characteristics (continued) test conditions: two-tone measurement @ p out = 160 w (pep). figure 10. imd vs. tone separation -60 -50 -40 -30 -20 -10 0 0.1 1 10 10 0 tone separation (mhz) z imd (dbc) z im3 im5 im7
preliminary data sheet AGR26180EF may 2004 180 w, 2.535 ghz?2.655 ghz, n-channel e-mode, lateral mosfet package dimensions all dimensions are in inches. tolerances are 0.005 in. unless specified. label notes: m before the part number denotes model program. x bef ore the part number denot es engineering prototype. the last two letters of the part number denote wafer technology and package type. yywwll is the date code including place of ma nufacture: year year work week (yyww), ll = location (al = allentown, pa; t = thai land). xxxxx = five-digit wafer lot number. zzzzzzz = seven-digit assembly lot number on production parts. zzzzzzzzzzzz = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes. pins: 1a. drain 1b. drain 2a. gate 2b. gate 3. source 1a 1b 2a 2b 3 agr19k180u yywwll xxxxx zzzzzzz peak devices agr26180xf yywwll xxxxx zzzzzzz
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